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630AT
Goford Semiconductor
Manufacturer Part #:
630AT
Manufacturer:
Package:
TO-220
Data Code:
-
Datasheet:
-
Description:
N200V,RD(MAX)<250M@10V,RD(MAX)<3
Quantity:
In Stock : 63
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Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.8265
$0.8265
10
$0.71725
$7.1725
100
$0.49656
$49.656
500
$0.41488
$207.44
1000
$0.35309
$353.09
2000
$0.31447
$628.94
5000
$0.29792
$1489.6
10000
$0.27586
$2758.6
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| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 1A, 10V |
| Power Dissipation (Max) | 83W (Tc) |
| Supplier Device Package | TO-220 |
| Gate Charge (Qg) (Max) @ Vgs | 11.8 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 509 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
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