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TK10J80E,S1E
Toshiba Semiconductor and Storage
Manufacturer Part #:
TK10J80E,S1E
Manufacturer:
Package:
TO-3P(N)
Data Code:
-
Datasheet:
-
Description:
MOSFET N-CH 800V 10A TO3P
Quantity:
In Stock : 15
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Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.812
$2.812
10
$2.5232
$25.232
100
$2.06748
$206.748
500
$1.76
$880
1000
$1.48434
$1484.34
2000
$1.41013
$2820.26
5000
$1.35711
$6785.55
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| Mfr | Toshiba Semiconductor and Storage |
| Series | π-MOSVIII |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Base Product Number | TK10J80 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 5A, 10V |
| Power Dissipation (Max) | 250W (Tc) |
| Supplier Device Package | TO-3P(N) |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
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