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GT080N10T
Goford Semiconductor
Manufacturer Part #:
GT080N10T
Manufacturer:
Package:
TO-220
Data Code:
-
Datasheet:
Description:
N100V, 70A,RD<8M@10V,VTH1.0V~3.0
Quantity:
In Stock : 62
Share
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.444
$1.444
10
$1.1989
$11.989
100
$0.95418
$95.418
500
$0.80742
$403.71
1000
$0.68508
$685.08
2000
$0.65083
$1301.66
5000
$0.62636
$3131.8
10000
$0.60562
$6056.2
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| Mfr | Goford Semiconductor |
| Series | GT |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 50A, 10V |
| Power Dissipation (Max) | 100W (Tc) |
| Supplier Device Package | TO-220 |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2257 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
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